2N6076 TIN/LEAD

2N6076 TIN/LEAD

$0.20
  • Description:25V 100MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:ea83504ebd51 Category: Brand:

  
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Product Detailed Parameters

  • Description:25V 100MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N6076 TIN/LEAD

Overview

The 2N6076 TIN/LEAD is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92 cylindrical package for through-hole mounting. The device supports a maximum collector current of 0.1 A with a collector-emitter voltage rating of 25 V. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum operating temperature of 150 °C. This component is specifically designed for low-noise applications.

Feature Summary

  • Engineered for low-noise signal processing operations
  • Capable of high thermal stability up to 150 °C
  • Constructed using silicon semiconductor technology

Applications

  • Low-noise amplifier circuits
  • Audio signal processing stages
  • Precision sensor interface designs

Procurement Notes

Verify the specific plating configuration required, as the TIN/LEAD suffix indicates lead-based termination. Confirm RoHS compliance status prior to ordering, as this variant may not meet modern environmental directives. Ensure the procurement channel provides official datasheets to validate the low-noise specifications and thermal limits against design requirements.

Selection Notes

Select this component when circuit designs demand low noise performance from a PNP transistor within a TO-92 form factor. Verify that the 25 V collector-emitter voltage and 0.1 A current ratings align with the load requirements. Consider the 150 °C maximum junction temperature for thermal management planning in enclosed environments.

Part Context

This part belongs to the standard discrete bipolar transistor category produced by Central Semiconductor. It serves as a specialized alternative to general-purpose transistors where signal integrity and minimal noise introduction are critical. The TO-92 package allows for easy integration into legacy and modern through-hole PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering any generic PNP TO-92 alternatives.

2N6076 TIN/LEAD2N6076 TIN/LEAD
$0.20
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