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The 2N6076 TIN/LEAD is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92 cylindrical package for through-hole mounting. The device supports a maximum collector current of 0.1 A with a collector-emitter voltage rating of 25 V. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum operating temperature of 150 °C. This component is specifically designed for low-noise applications.
Verify the specific plating configuration required, as the TIN/LEAD suffix indicates lead-based termination. Confirm RoHS compliance status prior to ordering, as this variant may not meet modern environmental directives. Ensure the procurement channel provides official datasheets to validate the low-noise specifications and thermal limits against design requirements.
Select this component when circuit designs demand low noise performance from a PNP transistor within a TO-92 form factor. Verify that the 25 V collector-emitter voltage and 0.1 A current ratings align with the load requirements. Consider the 150 °C maximum junction temperature for thermal management planning in enclosed environments.
This part belongs to the standard discrete bipolar transistor category produced by Central Semiconductor. It serves as a specialized alternative to general-purpose transistors where signal integrity and minimal noise introduction are critical. The TO-92 package allows for easy integration into legacy and modern through-hole PCB layouts.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering any generic PNP TO-92 alternatives.