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The onsemi 2N6111 is a PNP epitaxial-base silicon transistor housed in a TO-220 plastic package. It features a collector-emitter voltage rating of 30 V and a continuous collector current capability of 7 A. The device supports a power dissipation of 40 W and operates with a transition frequency of 10 MHz. Designed for through-hole mounting, this component serves as a robust solution for medium-power applications requiring reliable switching and amplification within its specified electrical limits.
Verify the specific manufacturer source when sourcing this component, as availability varies across suppliers. Note that some distributors list this part as obsolete or end-of-life. Confirm the exact datasheet version and marking details to ensure compatibility with existing designs. Cross-reference pinouts and absolute maximum ratings from official documentation before integration to avoid design errors.
Select the 2N6111 for applications requiring a PNP transistor with 30 V blocking capability and 7 A current handling. Ensure the thermal design accommodates the 40 W power dissipation limit in the TO-220 package. Consider the 10 MHz transition frequency for speed requirements. Verify that the operating environment stays within the specified temperature ranges defined in the official electrical characteristics table.
The 2N6111 belongs to a family of medium-power bipolar junction transistors intended for general-purpose use. It is often grouped with similar PNP devices like the 2N6107 and 2N6109. These components are standard choices for legacy and modern designs needing reliable through-hole power switching. The TO-220 form factor remains common for manual assembly and prototyping workflows.
Public confirmed substitute part numbers include the 2N6107 and 2N6109 from STMicroelectronics. These devices share similar PNP characteristics and package types. Verify electrical parameters such as voltage ratings and current capabilities against the original design requirements before substitution.