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Product Detailed Parameters
- Description：TRANS PNP 350V 2A TO-66
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：350 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 125mA, 1A
- Current - Collector Cutoff (Max)：5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 1A, 4V
- Power - Max：35 W
- Frequency - Transition：20MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6213 is a silicon PNP high-power transistor housed in a TO-66 case. It features a collector-base voltage of 400 V, a collector-emitter voltage of 350 V, and an emitter-base voltage of 6.0 V. The device supports a continuous collector current of 2.0 A and a peak collector current of 5.0 A. Power dissipation reaches 35 W with a thermal resistance of 5.0 °C/W. Operating junction temperature ranges from -65 to +200 °C. Electrical characteristics include a transition frequency of 20 MHz, maximum collector cutoff current of 0.5 mA at 360 V, and saturation voltages of 2.0 V (VCE) and 1.4 V (VBE).
Feature Summary
- Designed for high-speed switching applications utilizing fast turn-on and turn-off times.
- Capable of handling high-voltage amplifier operations with robust breakdown ratings.
- Constructed using silicon technology for reliable performance across extreme temperatures.
Applications
- High-speed switching circuits
- High-voltage amplifier stages
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as multiple entities produce devices under this designation. Confirm that the received unit matches the Central Semiconductor Corp specifications regarding voltage ratings and package dimensions. Ensure compliance with environmental regulations if lead-free plating is required, noting that specific suffixes may denote plating variations.
Selection Notes
Select the 2N6213 when circuit designs require a PNP power transistor capable of withstanding up to 350 V collector-emitter voltage. Consider its 2.0 A continuous current rating and 35 W power dissipation capability for load requirements. Evaluate the TO-66 package suitability for through-hole mounting and heat sinking needs within the system architecture.
Part Context
This component belongs to a family of silicon PNP power transistors designed for demanding electronic environments. It shares structural similarities with the 2N6211 and 2N6212 models, differentiated primarily by higher voltage breakdown thresholds. The TO-66 metal can package provides mechanical stability and efficient thermal management for high-power discrete semiconductor applications.
Replacement Considerations
Central Semiconductor Corp has classified the 2N6213 as End of Life (EOL). No direct replacement part number is currently provided by the manufacturer. Designers should consult technical support for potential alternate sources or evaluate alternative high-voltage PNP transistors meeting similar electrical parameters.
FAQ
What is the maximum collector-base voltage for the 2N6213?
The maximum collector-base voltage (VCBO) for the 2N6213 is 400 V.
Does the 2N6213 support lead-free plating options?
Yes, ordering suffixes such as 'PBFREE' are available to request lead-free plated devices.
What is the transition frequency (fT) of the 2N6213?
The transition frequency is specified at 20 MHz under conditions of VCE=10V, IC=200mA, and f=5.0MHz.
