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Product Detailed Parameters
- Description：TRANS NPN 200V 10A TO-254AA
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：10:00 AM
- Voltage - Collector Emitter Breakdown (Max)：200 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1A, 10A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 10A, 3V
- Power - Max：6 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C
- Mounting Type：Through Hole
- Package / Case：TO-254-3, TO-254AA
- Supplier Device Package：TO-254AA
- Grade：-
- Qualification：-
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Overview
The Microsemi Corporation 2N6249T1 is a power NPN silicon bipolar transistor designed for high-current applications. It features a collector current rating of 10A and a collector-emitter breakdown voltage of 200Vdc. The device utilizes a TO-254AA (TO-3) metal flange mount package with two pins, where the case serves as the collector terminal. This component is classified as a single-element discrete semiconductor suitable for robust industrial environments.
Feature Summary
- High current handling capability up to 10A
- Robust metal flange mount construction for thermal management
- Single-element NPN silicon design
Applications
- Industrial power switching circuits
- Motor control systems
- Power amplifier stages
Procurement Notes
Verify that the specific JANHC2N6249 or 2N6249T1 variant matches the required voltage and current specifications for the target circuit. Confirm compliance with RoHS directives if lead-free materials are mandatory for the assembly process. Ensure the TO-3 package dimensions align with the available mounting space on the printed circuit board or chassis.
Selection Notes
Select this component when a 200V collector-emitter voltage and 10A continuous current are required in a ruggedized metal package. Consider the thermal resistance characteristics inherent to the TO-3 flange mount design for effective heat dissipation. Evaluate the minimum DC current gain requirements against the driving circuit capabilities to ensure proper saturation or amplification performance.
Part Context
This part belongs to the 2N6249 series of power transistors manufactured by Microsemi Corporation. The series includes variants such as the 2N6250 and 2N6251, which offer higher voltage ratings of 275V and 350V respectively while maintaining similar current capabilities. These devices are standard NPN silicon transistors used in demanding power electronics applications.
Replacement Considerations
The JANHC2N6249 is a verified substitute part number within the same product family. Other variants like the 2N6250T1 and 2N6251T1 share the same physical package but differ in maximum voltage ratings.
