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Product Detailed Parameters
- Description：TRANS PNP DARL 100V 20A TO204
- Series：-
- Mfr：onsemi
- Package：Tray
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：20 A
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 200mA, 20A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 10A, 3V
- Power - Max：160 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204 (TO-3)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6287G is a PNP complementary silicon power transistor housed in a TO-204AA (TO-3) package. It features a maximum collector-emitter voltage of 100 Vdc and continuous collector current of 20 Adc. The device offers high DC current gain, typically 4000 at 10 Adc, with a total power dissipation rating of 160 W at 25°C case temperature. Operating junction temperatures range from -65°C to +200°C.
Feature Summary
- Monolithic construction incorporating built-in base-emitter shunt resistors for stability
- High DC current gain capability suitable for general-purpose amplifier applications
- Complementary pairing with the 2N6284 NPN transistor for push-pull configurations
Applications
- General-purpose amplifier circuits
- Low-frequency switching applications
- Push-pull output stages utilizing complementary NPN/PNP pairs
Procurement Notes
Verify the specific ordering suffix 'G' confirms Pb-Free packaging status as defined by the manufacturer's environmental compliance documentation. Ensure the procurement specification matches the PNP polarity required for the circuit design, distinct from the NPN 2N6284 variant. Confirm thermal management requirements align with the 160 W dissipation rating at the intended case temperature.
Selection Notes
Select this component for designs requiring high current handling and substantial voltage ratings in a flange-mountable metal case. The integrated base-emitter resistors simplify driver circuit design by preventing false turn-on. Consider the thermal resistance characteristics when designing heat sinking solutions for sustained operation near maximum ratings.
Part Context
This part belongs to the 2N628x series of complementary silicon power transistors manufactured by onsemi. The series includes the NPN 2N6284 and the PNP 2N6286/2N6287 variants. These devices are engineered for robust performance in power electronics, sharing identical electrical characteristics except for polarity differences between the NPN and PNP counterparts.
Replacement Considerations
The 2N6286 is an alternative PNP device within the same family but rated for 80 V collector-emitter voltage, which is lower than the 100 V rating of the 2N6287. Direct substitution requires verifying that the reduced voltage rating meets the application's peak operating conditions.
