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The onsemi 2N6288 is a silicon NPN power bipolar transistor housed in a TO-220AB flange mount package. It features a collector-emitter voltage rating of 30V and supports a maximum continuous collector current of 7A. The device has a minimum DC current gain (hFE) of 30 and a nominal transition frequency of 4 MHz. Designed for switching applications, it dissipates up to 40W of power with the case connected to the collector. The component utilizes through-hole terminals and plastic/epoxy encapsulation.
Verify the manufacturer origin carefully, as the 2N6288 designation was originally established by Motorola and may be produced by various semiconductor vendors including onsemi or others. Confirm that the specific lot matches the required electrical characteristics and package dimensions. Ensure the TO-220AB form factor aligns with existing thermal management infrastructure before finalizing procurement orders.
Select this component when a robust NPN power transistor with a 30V breakdown voltage and 7A current capacity is required. The TO-220AB package facilitates direct mounting to heatsinks via the collector tab. Consider the complementary PNP devices if a push-pull configuration is needed for the specific application design requirements.
This device belongs to the family of silicon NPN power transistors designed for high-power applications. It serves as the NPN counterpart to PNP types like the 2N6107, 2N6109, and 2N6111. The TO-220AB packaging standard ensures compatibility with common industrial and commercial thermal solutions while maintaining reliable electrical performance under load.
Direct substitutes include other manufacturers' versions of the 2N6288 specification. Complementary PNP replacements for circuit symmetry include the 2N6107, 2N6109, and 2N6111.