2N6294

Overview

The Microchip Technology 2N6294 is a power bipolar NPN silicon transistor housed in a TO-66 metal can package. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 4A. The device operates with a minimum DC current gain (hFE) of 750 and supports junction temperatures up to 200°C. Designed for switching applications, it utilizes a flange mount configuration with two pins.

Feature Summary

• High DC current gain capability
• Metal can construction for thermal stability
• Flange mount mounting style

Applications

• Power switching circuits
• High-current amplification stages

Procurement Notes

Verify the manufacturer designation carefully, as the 2N6294 part number is historically associated with Advanced Semiconductor, Inc. within the provided data. Confirm that the specific unit supplied matches the required TO-66 metal package and NPN polarity specifications before integration into designs requiring these exact physical and electrical constraints.

Selection Notes

Select this component when a high-gain NPN power transistor in a hermetic metal case is required. Ensure the application voltage does not exceed 60V and current remains within 4A limits. Consider the through-hole flange mount requirement for mechanical attachment and heat dissipation needs.

Part Context

This device belongs to the category of discrete bipolar transistors. It is distinct from operational amplifiers or microcontrollers found in other Microchip listings. The TO-66 package indicates a legacy or specialized industrial form factor suitable for high-reliability environments.

Replacement Considerations

No verified substitute part numbers are available in the source material.