2N6296 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6296 TIN/LEAD is a silicon PNP power transistor housed in a TO-66 package. It utilizes a Darlington configuration designed for high gain amplifier and medium-speed switching applications. The device features a collector-base voltage of 100 V, a collector-emitter voltage of 50 V, and an emitter-base voltage of 7 V. It supports a continuous collector current of 4 A with a maximum power dissipation of 30 W. The component operates within a temperature range of -65°C to +200°C.

Feature Summary

• Darlington configuration provides high current gain suitable for amplification tasks
• Silicon construction ensures stable performance across wide thermal ranges
• TO-66 metal can package offers robust mechanical protection and heat dissipation

Applications

• High gain amplifier circuits
• Medium speed switching applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin/lead composition requirements. Confirm that the TO-66 pinout matches the target design schematic before integration. Ensure thermal management strategies align with the 30 W power dissipation rating under expected operating conditions.

Selection Notes

Select this component when high current drive capability and elevated temperature tolerance are required. The TO-66 package is appropriate for through-hole mounting where superior thermal conductivity is necessary. Verify compatibility with existing circuit biasing networks due to the Darlington structure's inherent voltage drops.

Part Context

This part belongs to the family of silicon PNP power transistors manufactured by Central Semiconductor. It serves as a complement to other devices in the series, such as the 2N6294 and 2N6295, which share similar structural characteristics but may differ in polarity or specific electrical ratings.

Replacement Considerations

Public confirmed substitute part numbers include 2N6294 and 2N6295.