2N6300 PBFREE

Overview

The 2N6300 PBFREE is an NPN Darlington bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 8 A and a collector-emitter breakdown voltage of 60 V. The device has a power dissipation rating of 75 W and a gain bandwidth product of 4 MHz. Key electrical parameters include a collector-base voltage of 100 V, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 3 V. It operates within a temperature range of -65°C to +200°C and is housed in a TO-66-2 through-hole package.

Feature Summary

• Darlington configuration providing high DC current gain for efficient switching and amplification.
• Robust thermal design supporting high power dissipation up to 75 W.
• Extended operating temperature range suitable for demanding environments.

Applications

• High-power linear amplifier circuits
• Industrial motor control systems
• Power supply regulation stages

Procurement Notes

Verify the specific datasheet version from Central Semiconductor to confirm exact electrical tolerances and pinout configurations before integration. Ensure that the TO-66-2 package dimensions align with the target PCB or chassis mounting requirements. Confirm RoHS compliance status if restricted substances are a project constraint.

Selection Notes

Select this component when high current handling and elevated temperature operation are required. The Darlington structure offers significant current gain, reducing drive complexity compared to single-transistor solutions. Consider the 75 W power dissipation capability and TO-66-2 package for applications requiring robust thermal management and reliable performance under heavy loads.

Part Context

This part belongs to the 2N63 series of NPN Darlington transistors produced by Central Semiconductor. These devices are designed for general-purpose power applications, offering a balance of high current capacity and voltage tolerance. The series is characterized by its rugged construction and suitability for both linear and switching operations in industrial and commercial electronics.

Replacement Considerations

Cross-reference with other NPN Darlington transistors in the TO-66-2 package having comparable Ic and Vceo ratings. Verify pin compatibility and thermal characteristics when substituting with parts from different manufacturers to ensure circuit integrity.

FAQ

What is the maximum collector-emitter voltage for the 2N6300?

The maximum collector-emitter breakdown voltage (Vceo) is 60 V.

Is the 2N6300 a standard BJT or a Darlington pair?

It is an NPN Darlington transistor, which provides higher current gain than a standard single-junction BJT.