2N6300 TIN/LEAD

2N6300 TIN/LEAD

$9.75
  • Description:8A 60V TH TRANSISTOR-BIPOLAR POW
  • Series:-

SKU:9649ba814715 Category: Brand:

  
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Product Detailed Parameters

  • Description:8A 60V TH TRANSISTOR-BIPOLAR POW
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):500µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:75 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66
  • Grade:-
  • Qualification:-

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2N6300 TIN/LEAD

Overview

The Central Semiconductor 2N6300 TIN/LEAD is a silicon NPN single bipolar junction transistor housed in a TO-66-2 through-hole package. It features an 80 V collector-emitter voltage (VCEO), 80 V collector-base voltage (VCBO), and 5 V emitter-base voltage (VEBO). The device supports a continuous collector current of 8 A with a power dissipation rating of 75 W. Key electrical characteristics include a DC current gain (hFE) ranging from 750 to 18,000 at 4 A and 3 V, a transition frequency (fT) of 4 MHz, and a collector-emitter saturation voltage of 3 V. Operating temperatures range from -65 °C to +200 °C.

Feature Summary

  • High DC current gain capability for efficient signal amplification
  • Robust thermal performance supporting high power dissipation
  • Wide operating temperature range suitable for demanding environments

Applications

  • High-power linear amplifier circuits
  • Switching applications requiring high current handling
  • Industrial control systems

Procurement Notes

Verify the specific plating suffix required for your order, as Central Semiconductor distinguishes between lead-free and tin/lead variants using distinct part number suffixes. Confirm availability directly with the manufacturer or authorized distributors, as stock levels fluctuate. Ensure the procurement documentation matches the exact part number including the plating designation to avoid receiving incorrect material specifications.

Selection Notes

Select this component when designing circuits that require high current capacity and significant power dissipation capabilities. The TO-66 metal case provides superior thermal management compared to plastic packages. Consider the high hFE range for base drive requirements and ensure the application operates within the specified voltage and temperature limits to maintain reliability.

Part Context

This device belongs to the 2N63 series of high-power NPN transistors manufactured by Central Semiconductor. These components are designed for rugged applications requiring reliable operation under high stress conditions. The series is characterized by its ability to handle substantial currents while maintaining stable performance across a wide temperature spectrum.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute component meets the specific thermal and electrical requirements of the original design before implementation.

2N6300 TIN/LEAD2N6300 TIN/LEAD
$9.75
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