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The Central Semiconductor 2N6300 TIN/LEAD is a silicon NPN single bipolar junction transistor housed in a TO-66-2 through-hole package. It features an 80 V collector-emitter voltage (VCEO), 80 V collector-base voltage (VCBO), and 5 V emitter-base voltage (VEBO). The device supports a continuous collector current of 8 A with a power dissipation rating of 75 W. Key electrical characteristics include a DC current gain (hFE) ranging from 750 to 18,000 at 4 A and 3 V, a transition frequency (fT) of 4 MHz, and a collector-emitter saturation voltage of 3 V. Operating temperatures range from -65 °C to +200 °C.
Verify the specific plating suffix required for your order, as Central Semiconductor distinguishes between lead-free and tin/lead variants using distinct part number suffixes. Confirm availability directly with the manufacturer or authorized distributors, as stock levels fluctuate. Ensure the procurement documentation matches the exact part number including the plating designation to avoid receiving incorrect material specifications.
Select this component when designing circuits that require high current capacity and significant power dissipation capabilities. The TO-66 metal case provides superior thermal management compared to plastic packages. Consider the high hFE range for base drive requirements and ensure the application operates within the specified voltage and temperature limits to maintain reliability.
This device belongs to the 2N63 series of high-power NPN transistors manufactured by Central Semiconductor. These components are designed for rugged applications requiring reliable operation under high stress conditions. The series is characterized by its ability to handle substantial currents while maintaining stable performance across a wide temperature spectrum.
Consult official datasheets for pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute component meets the specific thermal and electrical requirements of the original design before implementation.