2N6388

$0.42

Description：TRANS NPN DARL 80V 10A TO-220
Series：-

SKU:08ee40d5c0a1 Category: Single Bipolar Transistors Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 80V 10A TO-220
Series：-
Mfr：STMicroelectronics
Package：Tube
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：10:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：3V @ 100mA, 10A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 5A, 3V
Power - Max：65 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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2N6388

Overview

The STMicroelectronics 2N6388 is a silicon NPN power transistor in a monolithic Darlington configuration, housed in a TO-220 plastic package. It features an integrated antiparallel collector-emitter diode and is designed for low to medium frequency power applications. Key electrical ratings include a maximum collector current of 10 A, peak collector current of 15 A, and total dissipation of 65 W at 25°C case temperature. The device supports a maximum collector-emitter voltage of 80 V and operates with junction temperatures up to 150°C.

Feature Summary

Monolithic NPN Darlington configuration for high current capability
Integrated antiparallel collector-emitter diode
Designed for low and medium frequency power applications

Applications

Low frequency power amplification
Medium frequency switching circuits
General-purpose power control systems

Procurement Notes

Verify the manufacturer designation on the component marking against official STMicroelectronics documentation. Confirm that the physical package matches the specified TO-220 dimensions and pinout configuration. Ensure the part number corresponds to the specific datasheet revision provided by the supplier to guarantee compliance with the published absolute maximum ratings and electrical characteristics.

Selection Notes

Select this component when a high DC current gain and robust saturation performance are required for power handling. Consider the thermal resistance from junction to case for heat sink design calculations. Evaluate the integrated diode functionality if flyback protection or freewheeling paths are needed within the circuit topology without adding external components.

Part Context

This device belongs to the family of silicon epitaxial-base NPN power transistors manufactured using monolithic integration techniques. It utilizes a standard TO-220 mechanical footprint common in through-hole mounting applications. The internal schematic includes resistive elements typical of Darlington structures to facilitate drive requirements while maintaining high current transfer ratios.

Replacement Considerations

Cross-reference with other NPN Darlington transistors rated for 80V and 10A in TO-220 packages. Verify pin compatibility and thermal resistance specifications before substitution.