2N6388G

Overview

The onsemi 2N6388G is an NPN silicon Darlington power transistor housed in a TO-220 package. It supports a maximum continuous collector current of 4 A and a collector-emitter voltage of 80 V. The device features a minimum DC current gain (hFE) of 2500 at 4 A. Maximum ratings include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a total power dissipation of 65 W. Operating temperatures range from -65°C to 150°C.

Feature Summary

• High DC current gain for efficient signal amplification
• Integrated built-in diode and resistor configuration
• Robust thermal performance with 65 W power dissipation capability

Applications

• General-purpose amplifier circuits
• Low-speed switching applications
• Power control systems requiring high input impedance

Procurement Notes

Verify the specific suffix 'G' against the manufacturer datasheet to confirm compliance details. Ensure the TO-220 package dimensions match the design requirements. Confirm that the 4 A rating aligns with the thermal management strategy, as higher current variants exist under the same base part number.

Selection Notes

Select this component when a high-gain NPN Darlington transistor is required for moderate current loads up to 4 A. The 80 V breakdown voltage suits low-to-medium voltage switching tasks. Consider the TO-220 form factor for through-hole mounting and heatsink integration in general-purpose industrial or consumer electronics designs.

Part Context

This device belongs to the 2N6388 series of NPN silicon power transistors. It is manufactured by onsemi and utilizes a standard TO-220AB flange mount package. The component is designed for robust operation in environments requiring reliable amplification and switching capabilities within specified thermal limits.

Replacement Considerations

The MJF6388 is electrically similar but rated for 100 V and 10 A. Verify if the higher voltage and current ratings are compatible with the existing circuit constraints before substitution.