2N6426_D26Z

Overview

The onsemi 2N6426_D26Z is an NPN Darlington transistor housed in a TO-92 package. It provides high current gain for currents up to 1.0 A with a collector-emitter breakdown voltage of 40 V and continuous collector current of 1.2 A. DC current gain ranges from 20,000 to 300,000 at specified test conditions. The device operates within a junction temperature range of -55°C to +150°C and features a total device dissipation of 625 mW.

Feature Summary

• High DC current gain suitable for sensitive signal amplification
• Darlington configuration enables efficient switching at moderate currents
• Robust thermal performance supporting operation up to 150°C

Applications

• High-gain audio preamplifiers
• Sensor interface circuits
• Low-level signal switching

Procurement Notes

Verify the specific D26Z suffix against official documentation to confirm tape and reel packaging requirements. Ensure compatibility with existing assembly processes for through-hole components. Confirm RoHS compliance status as historical data indicates potential non-compliance for older manufacturing runs.

Selection Notes

Select this component when extremely high current gain is required without complex biasing networks. Consider the saturation voltage characteristics at higher collector currents. Evaluate thermal management needs given the 625 mW power dissipation limit in standard TO-92 packages.

Part Context

This part belongs to the Fairchild Semiconductor discrete bipolar transistor family, now managed by onsemi. It utilizes Process 05 technology. The device serves as a high-performance alternative to standard single-transistor designs where maximum amplification is critical.

Replacement Considerations

Consult official substitution guides for equivalent NPN Darlington transistors. Verify pinout compatibility and electrical parameter overlaps before implementation.