SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 2N6427 TRE TIN/LEAD is a single NPN Darlington transistor housed in an SOT-23-3 surface-mount package. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 12 V. The device supports a maximum continuous collector current of 500 mA with a power dissipation rating of 350 mW. It operates within a temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's current datasheet to confirm tape-and-reel packaging and tin/lead plating availability. Confirm RoHS status and lead time directly with Central Semiconductor or authorized distributors, as these parameters are subject to change and require real-time verification before procurement.
Select this component when a compact NPN Darlington transistor is required for low-voltage (40 V) applications. Ensure the design accommodates the 350 mW power dissipation limit in the SOT-23-3 package. Verify that the 500 mA collector current rating meets the load requirements and that the operating environment stays within the specified -65 °C to +150 °C temperature range.
This part belongs to the Central Semiconductor Darlington transistor family, which provides high current gain in small packages. The 2N6427 series is commonly used in applications requiring moderate current handling with minimal drive current. The tin/lead plating option indicates compliance with specific legacy or military-grade material requirements rather than standard lead-free specifications.
Cross-reference with other NPN Darlington transistors in the SOT-23-3 package offering similar 40 V VCEO and 500 mA IC ratings. Verify pinout compatibility and thermal characteristics before substitution.