2N6431 PBFREE

$1.68

Description：TRANS NPN 300V 0.1A TO-18
Series：-

SKU:aaea0928b9d4 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 300V 0.1A TO-18
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 30mA, 10V
Power - Max：1.8 W
Frequency - Transition：50MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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2N6431 PBFREE

Overview

The Central Semiconductor Corp 2N6431 PBFREE is an NPN silicon transistor manufactured via the epitaxial planar process, designed for high voltage amplifier applications. It features a collector-base voltage (V_CBO) and collector-emitter voltage (V_CEO) of 300 V, with a continuous collector current (I_C) rating of 500 mA. Power dissipation is rated at 1.8 W at 25°C case temperature and 500 mW at ambient conditions. The device operates within a junction temperature range of -65 to +200 °C. Electrical characteristics include a minimum DC current gain (h_FE) of 30 at I_C=30mA, a transition frequency (f_T) of 50 MHz at I_C=10mA, and a maximum collector-base cutoff current (I_CBO) of 250 nA at V_CB=200V.

Feature Summary

Epitaxial planar construction for high voltage stability
Complementary pairing available with the 2N6433 PNP device
Wide operating temperature range suitable for demanding environments

Applications

High voltage amplifier circuits
General purpose switching applications
Complementary push-pull configurations

Procurement Notes

Verify that the ordering suffix PBFREE corresponds to lead-free plating as specified in manufacturer documentation. Confirm package type TO-18 availability and ensure compliance with specific environmental regulations required by the end application. Cross-reference datasheet revision R2 for accurate electrical limits before finalizing procurement specifications.

Selection Notes

Select this component when a 300 V NPN transistor with moderate power handling is required. Compare h_FE ranges against circuit biasing needs, noting the variation between low and high current gains. Ensure thermal management strategies accommodate the 500 mW ambient dissipation limit if case cooling is not utilized.

Part Context

This part belongs to the 2N6430 series of complementary silicon transistors from Central Semiconductor. The series includes NPN (2N6430/2N6431) and PNP (2N6432/2N6433) variants. These devices are distinguished by their high voltage ratings and robust thermal performance compared to standard small-signal transistors.