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Product Detailed Parameters
- Description：TRANS PNP 60V 15A TO-220AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：15 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：3.5V @ 5A, 15A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5A, 4V
- Power - Max：1.8 W
- Frequency - Transition：5MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The 2N6490 is a PNP bipolar junction transistor (BJT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 15 A. The device operates with a transition frequency of 5 MHz and dissipates up to 1.8 W of power. It is housed in a TO-220AB through-hole package, designed for robust thermal management in high-current applications.
Feature Summary
- Complementary PNP counterpart to the 2N6488 NPN power transistor
- Designed for power linear and low-frequency switching applications
- Through-hole construction suitable for high-current handling
Applications
- Power linear amplifier circuits
- Low-frequency switching applications
- Complementary output stages in audio or power supplies
Procurement Notes
Verify manufacturer status as Central Semiconductor Corp lists this part as End of Life (EOL). Confirm availability from Harris Corporation or onsemi/AMI Semiconductor sources. Check datasheet revisions for electrical parameter consistency. Ensure TO-220AB package compatibility with existing PCB footprints before procurement.
Selection Notes
Select this component when a 60 V, 15 A PNP BJT is required for linear or low-frequency switching tasks. Consider thermal resistance limits given the 1.8 W dissipation rating. Verify complementary pairing requirements if used alongside NPN devices like the 2N6488. Evaluate package mounting constraints for TO-220AB form factors.
Part Context
The 2N6490 belongs to a family of complementary silicon power transistors including the 2N6489 and 2N6491 variants. Originally associated with Harris Corporation, production rights may involve onsemi or Central Semiconductor Corp. These devices are engineered for robust performance in discrete power semiconductor applications requiring high current capacity.
Replacement Considerations
Public confirmed substitutes include the 2N6491G from onsemi. Verify pinout and electrical specifications match the original design requirements before substitution.
