2N6512

Overview

The Microchip Technology 2N6512 is a silicon NPN power transistor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 400V and a collector-base voltage of 300V. The device operates with a transition frequency of 3 MHz and includes specific collector capacitance characteristics. Available in TO-204AA and TO-3 packages, it supports through-hole mounting configurations suitable for robust industrial environments.

Feature Summary

• High-voltage NPN power transistor construction
• Designed for off-line power supply and inverter circuits
• Silicon-based bipolar junction technology

Applications

• Off-line power supplies
• High voltage inverters
• Switching regulators
• Ignition systems
• Deflection circuits

Procurement Notes

Verify the manufacturer marking on the component body to confirm Microchip Technology origin. Check package type (TO-204AA or TO-3) against schematic requirements. Ensure datasheet revisions match current design specifications. Confirm pinout compatibility before integration into existing PCB layouts.

Selection Notes

Select this component for high-voltage switching tasks requiring 400V collector-emitter capability. Consider thermal management needs due to power dissipation limits. Evaluate package constraints for mechanical fit within the enclosure. Verify frequency response meets circuit switching speed requirements.

Part Context

The 2N6512 belongs to the family of silicon NPN power transistors used in medium-to-high power electronics. It serves as a discrete semiconductor switch rather than an integrated circuit. Its design focuses on durability and voltage handling in linear and switching modes.

Replacement Considerations

Consult official cross-reference lists for verified equivalents. Ensure substitute parts match voltage ratings and package dimensions. Verify electrical characteristics align with original design margins.