2N6516 TRE TIN/LEAD

Single Bipolar Transistors Overview

The 2N6516 TRE TIN/LEAD is an NPN epitaxial silicon transistor manufactured by Central Semiconductor Corp. It features a collector-base voltage of 300 V, a collector-emitter voltage of 300 V, and an emitter-base voltage of 6.0 V. The device supports a maximum continuous collector current of 500 mA with a power dissipation rating of 625 mW. It utilizes a TO-92-3 through-hole package and includes a tin/lead plating suffix for ordering.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding circuit applications
• Epitaxial silicon construction for stable performance
• Through-hole mounting configuration

Single Bipolar Transistors Applications

• High voltage switching circuits
• General purpose amplification
• Power supply regulation

Single Bipolar Transistors Procurement Notes

Verify the specific 'TRE' suffix against official Central Semiconductor documentation to confirm lead form or tape-and-reel specifications. Ensure the 'TIN/LEAD' designation is included in purchase orders as required for plated devices. Confirm RoHS compliance status if restricted substances are a constraint for the target application.

Single Bipolar Transistors Selection Notes

Select this component when high collector-emitter voltage ratings are required alongside moderate current handling capabilities. The TO-92-3 package facilitates easy integration into through-hole PCB layouts. Consider complementary PNP variants within the same series for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to a family of high-voltage bipolar junction transistors produced by Central Semiconductor. The 2N6516 serves as the NPN counterpart to other models in the lineup, providing matched characteristics for differential or complementary circuit designs requiring reliable high-voltage operation.

Single Bipolar Transistors Replacement Considerations

Consult manufacturer cross-reference guides for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with generic NPN transistors.