2N6517 TRE TIN/LEAD

$0.37

Description：350V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:209dea810c90 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6517 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 350V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6517 TRE TIN/LEAD

Description：350V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：350 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 10V
Power - Max：625 mW
Frequency - Transition：40MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6517 TRE TIN/LEAD

2N6517 TRE TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6517 TRE TIN/LEAD is an NPN silicon small-signal transistor designed for high-voltage applications. It utilizes a TO-92 through-hole package and supports a junction temperature up to 150°C. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 4.5 V. The device handles a continuous collector current of 50 mA with a power dissipation of 350 mW. It features a minimum DC current gain (hFE) of 250 at 1 mA and offers a transition frequency (fT) of 30 MHz.

Single Bipolar Transistors Feature Summary

High-voltage capability suitable for demanding switching environments
Robust mechanical construction in a standard TO-92 through-hole package
High DC current gain for efficient signal amplification

Single Bipolar Transistors Applications

General-purpose high-voltage switching circuits
Small-signal amplification stages
Low-power audio processing applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm lead-free compliance and packaging type. Confirm availability status directly with authorized distributors as inventory levels fluctuate. Ensure the component meets all required environmental certifications for the intended deployment before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required in a compact through-hole form factor. Compare the 50 V rating and 350 mW dissipation against circuit requirements. Consider the TO-92 package constraints for thermal management and board space limitations during the design phase.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose bipolar junction transistor family from Central Semiconductor. It serves as a discrete semiconductor solution for analog and digital switching tasks. The TO-92 package provides a cost-effective mounting option for low-to-medium power electronic designs requiring reliable NPN performance characteristics.