2N6517BU

Overview

The onsemi 2N6517BU is a high-voltage NPN silicon epitaxial planar transistor designed for through-hole mounting in TO-92 packages. It features a collector-emitter voltage of 350 V and a continuous collector current of 500 mA. The device offers a transition frequency up to 200 MHz and supports junction temperatures from -55°C to +150°C. Thermal resistance is rated at 200 °C/W junction-to-ambient and 83.3 °C/W junction-to-case.

Feature Summary

• High voltage capability with 350 V collector-emitter breakdown
• Suitable for high-frequency applications with 200 MHz gain-bandwidth product
• Robust thermal performance supporting operation up to 150°C

Applications

• High voltage switching circuits
• General purpose amplification
• Power supply output stages

Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines package style and shipping configuration. Confirm RoHS compliance status and lead finish details directly from the manufacturer's datasheet before procurement. Ensure the component meets all environmental and safety standards required for the intended application.

Selection Notes

Select this component when designs require high voltage handling combined with moderate current capacity in a standard through-hole package. Evaluate thermal management requirements based on the specified power dissipation limits. Compare electrical characteristics against alternative high-voltage transistors to ensure compatibility with existing circuit parameters.

Part Context

This part belongs to the 2N6515/2N6517 series of high-voltage transistors manufactured by onsemi. It shares specifications with the PNP counterpart 2N6520 within the same family. The device utilizes an epitaxial planar process suitable for reliable high-voltage operations in various electronic systems.

Replacement Considerations

Direct substitutes include the 2N6517G and 2N6517RLRPG variants which share identical electrical ratings but differ in packaging or shipping format.