2N6518 TIN/LEAD

$0.35

Description：250V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:70de017e8072 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：250V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：250 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
Power - Max：625 mW
Frequency - Transition：40MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N6518 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6518 TIN/LEAD is a PNP epitaxial silicon small-signal transistor designed for high-voltage driver and amplifier applications. It features a collector-emitter breakdown voltage of 250 V, a maximum collector current of 500 mA, and a power dissipation rating of 625 mW. The device operates in a TO-92-3 through-hole package with tin/lead terminal finish. Key electrical characteristics include a gain bandwidth product (fT) of 200 MHz and a collector-emitter saturation voltage of 300 mV.

Feature Summary

High voltage capability suitable for demanding driver circuits
Complementary design available within the series for amplifier configurations
Through-hole mounting for robust mechanical integration

Applications

High voltage driver circuits
Amplifier stages requiring PNP topology
General purpose switching applications

Procurement Notes

Verify the specific suffix designation when ordering to ensure compatibility with required lead finish and packaging standards. Confirm that the tin/lead variant meets all environmental compliance requirements for the target assembly process. Cross-reference the manufacturer datasheet for precise thermal resistance values and absolute maximum ratings prior to finalizing the bill of materials.

Selection Notes

Select this component for designs necessitating a PNP transistor with a 250 V collector-emitter breakdown voltage. Ensure the application current does not exceed 500 mA and that thermal management supports the 625 mW power dissipation limit in the TO-92 package. Consider complementary devices from the same series if NPN counterparts are required for push-pull or differential configurations.

Part Context

This part belongs to a family of complementary silicon transistors intended for high-voltage operations. It serves as the PNP counterpart in driver and amplifier topologies, offering reliable performance in small-signal environments where higher voltage tolerance is critical compared to standard low-voltage alternatives.