Single Bipolar Transistors 2N6520 APM TIN/LEAD product image

2N6520 APM TIN/LEAD

$0.32
  • Description:350V 500MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:31c9aed25f59 Category: Brand:

  
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2N6520 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 350V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6520 APM TIN/LEAD

  • Description:350V 500MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 30mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6520 APM TIN/LEAD

2N6520 APM TIN/LEAD

Single Bipolar Transistors Overview

The 2N6520 APM TIN/LEAD is a PNP silicon epitaxial planar bipolar junction transistor manufactured by Central Semiconductor Corp. It features a through-hole TO-92-3 kinked lead package with tin/lead termination. Key electrical parameters include a collector-emitter voltage (VCEO) of 350 V, a collector-base voltage (VCBO) of 350 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum continuous DC collector current of 500 mA and dissipates up to 625 mW of power. It offers a gain-bandwidth product of 40 MHz and a minimum DC current gain (hFE) of 30.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 350 V collector-emitter breakdown
  • PNP polarity configuration for complementary circuit applications
  • Through-hole mounting in a standard TO-92-3 kinked lead package

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • Complementary amplifier stages
  • General purpose signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official datasheets to confirm pinout orientation and electrical tolerances. Ensure the procurement channel provides traceable documentation matching the manufacturer's specifications. Confirm that the tin/lead finish meets project requirements regarding material composition standards. Cross-reference the ordering information with the latest Central Semiconductor Corp publications to avoid discrepancies in package type or testing criteria.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is required for through-hole assembly. The 350 V rating distinguishes it from lower-voltage general-purpose alternatives. Consider the 500 mA current limit and 625 mW power dissipation constraints during thermal design. The TO-92-3 package facilitates easy integration into legacy board layouts requiring kinked leads for secure mechanical retention.

Single Bipolar Transistors Part Context

This part belongs to the 2N6520 series of high-voltage PNP transistors produced by Central Semiconductor Corp. It serves as a specialized alternative to other high-voltage discrete devices within the broader family of small-signal bipolar transistors. The component is designed for robust performance in environments demanding reliable switching and amplification at elevated voltages.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include equivalent PNP high-voltage transistors such as the MPSA92, provided voltage and current ratings are sufficient. Verify pin compatibility and thermal characteristics before substitution.

2N6520 APM TIN/LEAD2N6520 APM TIN/LEAD
$0.32
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