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2N6520 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 350V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.
The Central Semiconductor Corp 2N6520 TRE TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a collector-emitter breakdown voltage of 350V and supports a maximum continuous collector current of 500mA. The device operates with a power dissipation rating of 625mW and utilizes a TO-92-3 through-hole package. This component serves as a leaded alternative to the standard lead-free version, catering to specific manufacturing requirements.
Verify the specific requirement for tin/lead terminations against environmental compliance standards before procurement. Confirm that the leaded variant meets all necessary regulatory constraints for the intended deployment region. Ensure compatibility with existing soldering profiles and thermal management systems designed for this package type.
Select this part when a PNP transistor with 350V blocking capability is required in a TO-92 package. Consider the tin/lead composition if lead-free alternatives are unsuitable for the specific application environment. Compare performance metrics against other high-voltage small-signal transistors to ensure optimal circuit efficiency.
This component belongs to the 2N6520 family of high-voltage PNP transistors manufactured by Central Semiconductor. It shares core electrical characteristics with the lead-free 2N6520 TRE PBFREE variant but differs in terminal composition. The series is widely recognized for reliability in discrete semiconductor applications requiring robust voltage handling.
The 2N6520 TRE PBFREE is the direct lead-free equivalent within the same manufacturer's lineup. Cross-reference technical specifications to ensure functional parity regarding voltage ratings and package dimensions before substitution.
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