2N6661

$13.52

Description：MOSFET N-CH 90V 350MA TO39
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:a3019b0f7eef Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 90V 350MA TO39
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：90 V
Current - Continuous Drain (Id) @ 25°C：350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 24 V
FET Feature：-
Power Dissipation (Max)：6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6661

Overview

The 2N6661 is an N-Channel, Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 90V and a maximum gate-to-source voltage of ±20V. The device exhibits a static drain-to-source on-state resistance of 4.0Ω at VGS=10V and ID=1.0A, with a continuous on-state drain current of 1.5A. Operating temperatures range from -55°C to +150°C. Key AC parameters include an input capacitance of 50pF and forward transconductance of 170mmho.

Feature Summary

Free from secondary breakdown due to positive temperature coefficient inherent in MOS structures
Low power drive requirement combined with high input impedance
Integral source-drain diode for simplified circuit design
Fast switching speeds with low input capacitance

Applications

Motor controls
Power supply circuits
Amplifiers
Switches
Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors

Procurement Notes

Verify the specific package type and environmental compliance status against the manufacturer's ordering information system before procurement. Confirm that the TO-39 lead-free/ROHS-compliant designation matches project requirements. Ensure all absolute maximum ratings are respected during design validation to prevent permanent damage or reliability degradation over the specified operating temperature range.

Selection Notes

Select this component for applications requiring vertical DMOS structure benefits such as thermal stability and ease of paralleling. Consider the 90V breakdown voltage and 4.0Ω on-resistance for appropriate load matching. Evaluate the fast switching characteristics and low input capacitance for high-frequency performance needs. Verify compatibility with existing driver circuits given the enhancement-mode operation and gate threshold specifications.

Part Context

The 2N6661 belongs to the family of N-Channel, Enhancement-Mode Vertical DMOS FETs produced by Microchip Technology. It utilizes a silicon-gate manufacturing process to achieve power-handling capabilities comparable to bipolar transistors while maintaining MOS-specific advantages like high input impedance. The device is designed for switching and amplifying applications where low threshold voltage and high breakdown voltage are critical.