2N6773

Single Bipolar Transistors Overview

The Harris Corporation 2N6773 is a single-element NPN silicon power bipolar transistor housed in a TO-220AB flange mount package. It supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 350 V. The device features a minimum DC current gain (hFE) of 10 and a maximum collector capacitance of 60 pF. Designed for switching applications, it operates up to a junction temperature of 150 °C with a maximum power dissipation environment of 40 W.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 350 V collector-emitter breakdown rating
• Robust thermal design suitable for flange mounting
• Optimized for high-speed switching operations

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Intersil and subsequently Renesas. Ensure the specific suffix matches the required pinout and electrical tolerance specifications. Confirm RoHS compliance status if environmental regulations apply to the target assembly. Cross-reference datasheet revisions to ensure parameter consistency with current production batches.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN switch is required with moderate current handling capabilities. The TO-220AB package facilitates efficient heat dissipation through direct chassis mounting. Compare against similar 350V transistors to verify hFE ranges and switching speeds meet specific circuit timing requirements. Ensure adequate base drive current is available to saturate the transistor effectively at the 1 A load level.

Single Bipolar Transistors Part Context

This part belongs to the Harris power transistor lineup designed for robust industrial and commercial applications. The 2N6773 shares the same physical footprint and general electrical profile as the 2N6772-6263 and 2N6772-6258 variants, differing potentially in specific testing criteria or manufacturing lot characteristics defined by the original Harris Semiconductor division standards.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.