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The Diotec Semiconductor 2N7002A-AQ is an N-Channel Enhancement Mode FET housed in a SOT-23 (TO-236) package. It features a drain-source voltage of 60 V, continuous drain current of 115 mA, and power dissipation of 225 mW. The device exhibits low on-state resistance below 5 Ω at 10 V gate drive and 500 mA drain current. Junction temperature reaches +150°C with storage limits from -50°C to +150°C. Electrical characteristics include a threshold voltage range of 1 V to 2.5 V, input capacitance of 50 pF, and turn-on/turn-off times of 20 ns and 40 ns respectively.
Verify the specific suffix designation during procurement. The '-AQ' suffix indicates the component is currently undergoing AEC-Q101 qualification rather than holding full compliance. Confirm final automotive grade status directly with the manufacturer before integrating into certified automotive systems.
Select this component for standard commercial or industrial applications requiring single-channel N-Channel MOSFETs. Ensure the design accommodates the specified maximum junction temperature of 150°C and verify that the required drain current remains within the 115 mA continuous limit under operating conditions.
This part belongs to the 2N7002 family of N-Channel Enhancement Mode FETs manufactured by Diotec Semiconductor. While the base model serves general commercial use, the '-AQ' variant represents the company's effort to meet automotive reliability standards through ongoing qualification processes.
Cross-reference with other 2N7002 variants from different manufacturers. Verify pinout compatibility and ensure replacement parts match the 60V rating and SOT-23 footprint requirements.