2N7002DW-13-G

Description：MOSFET 2N-CH 60V SOT-363
Series：*

SKU:e85d125492d1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V SOT-363
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2N7002DW-13-G

Overview

The Diodes Incorporated 2N7002DW-13-G is a dual N-channel enhancement mode MOSFET housed in a compact SOT-363 surface-mount package. Designed for low-voltage switching applications, the device features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 0.3A at 25°C. The typical on-resistance (RDS(on)) is 3Ω at VGS=10V, with a gate threshold voltage range of 1.5V to 2.5V. Key dynamic parameters include an input capacitance (Ciss) of 13pF and a total gate charge (QG) of 0.4nC at 10V. The component supports a junction temperature up to 150°C and is RoHS compliant.

Feature Summary

Dual configuration within a single SOT-363 package for space-efficient circuit design
Low gate threshold voltage enabling direct logic-level drive compatibility
Fast switching performance characterized by minimal gate charge and capacitance
Lead-free construction adhering to RoHS standards for automated assembly

Applications

Load switching circuits
Level shifting interfaces
Signal processing control

Procurement Notes

Verify the specific manufacturer suffix against the official datasheet to confirm pinout orientation and electrical tolerances. Ensure the ordering code matches the required tape-and-reel quantity. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the thermal resistance values with the intended PCB footprint to validate heat dissipation requirements.

Selection Notes

Select this component when dual N-channel isolation is required in a minimal footprint. The 60V rating suits low-voltage digital systems. Verify that the 0.3A continuous current limit meets the load requirements. Consider the 3Ω on-resistance for power loss calculations in high-frequency switching scenarios. Ensure the logic voltage levels align with the specified gate threshold range.

Part Context

This part belongs to the 2N7002 family of small-signal MOSFETs. It differs from the standard single-channel 2N7002 by integrating two transistors in one SOT-363 package. This integration reduces board space and simplifies layout for dual-switch applications. The device maintains similar electrical characteristics to its single-channel counterparts while offering higher density.