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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.23A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：230mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：310mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The 2N7002DW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 0.23A at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 7.5Ω maximum at VGS = 5V. Packaged in an ultra-small SOT363 surface mount format, it supports a total power dissipation of 0.31W at +25°C. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a single ultra-small surface mount package
- Low on-state resistance combined with fast switching speed for high-efficiency applications
- Totally lead-free and fully RoHS compliant with halogen and antimony free construction
Applications
- Motor control systems
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required environmental standards, including RoHS compliance and moisture sensitivity levels, prior to procurement. Ensure the selected variant matches the exact electrical specifications required for the target circuit design.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Evaluate the thermal resistance characteristics relative to the intended PCB layout and copper area. Consider the gate threshold voltage limits to ensure compatibility with the driving logic levels used in the application circuit.
Part Context
This part belongs to the 2N7002DW series of dual N-channel enhancement mode MOSFETs. It shares the core electrical architecture with other variants in the family but differs in packaging and manufacturing lot specifications. The device is designed to minimize on-state resistance while maintaining superior switching performance for space-constrained designs.
Replacement Considerations
Consult the manufacturer's automotive grade listing for parts qualified to AEC-Q100/101/200 standards if automotive reliability is required. Verify pinout compatibility and thermal characteristics before substituting with components from other manufacturers.
