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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.115A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The onsemi 2N7002DW-G is a dual N-channel enhancement mode field effect transistor housed in an SC-70-6 (SOT-363) surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 115 mA at 25°C, derating to 73 mA at 100°C. The device exhibits a maximum static drain-source on-resistance of 7.5 Ω at VGS = 5V and ID = 0.05 A, or 13.5 Ω at TJ = 125°C. Gate threshold voltage ranges from 1.0 V to 2.0 V. Total power dissipation is limited to 200 mW with a thermal resistance junction-to-ambient of 415 °C/W. Operating temperature spans -55°C to +150°C.
Feature Summary
- Dual N-channel MOSFET configuration within a single ultra-small surface mount package
- Low on-resistance for efficient signal switching
- Fast switching speed with low input capacitance
- Lead-free, halogen-free, and brominated flame retardant-free construction
Applications
- Signal processing circuits
- Load switching applications
- Level shifting interfaces
- Small-signal amplification stages
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm that the component matches the required pinout style for the target PCB footprint. Ensure environmental certifications align with project specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring two isolated N-channel switches in a minimal footprint. Evaluate thermal constraints carefully due to the 200 mW power dissipation limit. Verify gate drive voltages remain within the specified thresholds to ensure reliable turn-on characteristics across the full operating temperature range.
Part Context
This part belongs to the 2N7002 family of small-signal MOSFETs manufactured by onsemi. It provides a compact solution for integrating multiple switching elements into space-constrained electronic assemblies while maintaining standard N-channel enhancement mode performance characteristics.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in SOT-363 packages such as the BSS138 dual variant or similar SC-70-6 devices. Verify pin compatibility and electrical ratings match the original design requirements before substitution.
FAQ
What is the pin configuration for the 2N7002DW?
Pin 1 is Source 2, Pin 2 is Drain 2, Pin 3 is Gate 1, Pin 4 is Source 1, Pin 5 is Drain 1, and Pin 6 is Gate 2.
Is the 2N7002DW suitable for high-frequency switching?
Yes, it features fast switching speeds with typical turn-on delay of 5.85 ns and turn-off delay of 12.5 ns.
What is the maximum pulsed drain current?
The maximum pulsed drain current is rated at 800 mA.
