ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.115A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：115mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88 (SC-70-6)
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi 2N7002DW is a dual N-channel enhancement mode field effect transistor housed in an SC-88 (SOT-363) surface mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 115 mA at 25°C. The static drain-source on-resistance is specified as a maximum of 7.5 Ω at VGS = 5V and ID = 0.05 A, or 13.5 Ω at VGS = 10V and TJ = 125°C. The gate threshold voltage ranges from 1.00 V to 2.0 V at ID = 250 µA. Total device power dissipation is rated at 200 mW, with a junction temperature range spanning -55°C to +150°C.
Feature Summary
- Dual N-channel MOSFET configuration
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Ultra-small surface mount package
Applications
- Signal processing circuits
- Load switching applications
- Level shifting interfaces
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance requirements including RoHS and halogen-free status are validated for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Evaluate thermal resistance characteristics and power derating curves to ensure adequate heat dissipation within the intended operating temperature range and ambient conditions.
Part Context
This device belongs to the 2N7002 family of small signal MOSFETs manufactured by onsemi. It utilizes DMOS technology to achieve high unit density and robust performance. The part is designed for general-purpose switching applications requiring low input capacitance and fast response times.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs in SOT-363 packages. Verify pinout compatibility and electrical parameter limits, specifically drain-source voltage and on-resistance values, to ensure functional equivalence in existing designs.
