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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.3A SOT363
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：300mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The Infineon Technologies 2N7002DWH6327XTSA1 is a dual N-channel OptiMOS™ small-signal MOSFET in a PG-SOT363 package. It features a 60 V drain-source breakdown voltage and logic-level operation with a maximum RDS(on) of 3 Ω at VGS=10 V and 4 Ω at VGS=4.5 V. The device supports a continuous drain current of 0.3 A, pulsed current up to 1.2 A, and power dissipation of 0.5 W. It includes avalanche rating capabilities, fast switching characteristics, and an integrated reverse diode.
Feature Summary
- Dual N-channel configuration with enhancement mode operation
- Avalanche rated for robust single-pulse energy handling
- Logic level gate drive compatibility for low-voltage applications
- Fast switching performance with optimized dynamic capacitances
Applications
- Low voltage and low current signal switching
- Small servo motor control circuits
- Power MOSFET gate driver stages
- General purpose digital switching applications
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and marking codes. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Confirm that the component meets AEC-Q101 qualification standards if automotive application is intended.
Selection Notes
Select this component when a compact dual N-channel solution is required for logic-level switching. The SOT363 package minimizes board space while providing sufficient thermal management for 0.5 W dissipation. Consider the 3 Ω on-resistance at 10 V gate drive for efficient conduction in low-current paths.
Part Context
This part belongs to the 2N7002DW series of OptiMOS™ small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology and is designed for surface-mount assembly. The device integrates two independent N-channel MOSFETs within a single six-lead outline, offering a cost-effective alternative to discrete single-transistor implementations.
Replacement Considerations
Cross-reference with other manufacturers' 2N7002 equivalents such as those from ON Semiconductor or Panjit. Verify pinout compatibility and electrical parameter margins, particularly RDS(on) and VGS(th), before substitution.
FAQ
Is the 2N7002DWH6327XTSA1 qualified for automotive applications?
Yes, the device is qualified according to AEC-Q101 standards.
What is the maximum avalanche energy capability?
The single pulse avalanche energy is rated at 1.3 mJ under conditions of ID=0.3 A and RGS=25 Ω.
Does the package contain halogens?
No, the component is halogen-free according to IEC61249-2-21.
