2N7002E-T1-E3

Description：MOSFET N-CH 60V 240MA SOT23-3
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:506723f83c31 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 240MA SOT23-3
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：21 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002E-T1-E3

Overview

The Vishay Siliconix 2N7002E-T1-E3 is a lead-free N-channel enhancement mode MOSFET housed in a TO-236 (SOT-23) package. It features a drain-source voltage of 60 V and a continuous drain current of 240 mA at 25 °C. The device exhibits a maximum on-resistance of 3 Ω at VGS = 10 V and ID = 250 mA, with a typical gate threshold voltage of 2.5 V. Power dissipation is rated at 0.35 W at 25 °C, and the junction temperature range spans from -55 °C to +150 °C.

Feature Summary

Halogen-free construction compliant with IEC 61249-2-21 definition
RoHS Directive 2002/95/EC compliant
Low input capacitance for fast switching speed
Logic-level operation capability

Applications

Direct logic-level interface with TTL or CMOS circuits
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Battery operated systems
Solid-state relays

Procurement Notes

Verify component authenticity by checking the marking code '7E' on the SOT-23 package against official Vishay documentation. Confirm that the ordering suffix '-T1-E3' corresponds to the specific tape-and-reel packaging and lead-free composition required for your assembly process. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance and fast switching characteristics is required. It is suitable for applications needing direct interfacing with standard logic levels without additional buffering. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions and duty cycle of the intended load.

Part Context

This part belongs to the 2N7002E series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes silicon technology and is designed for general-purpose switching applications. The TO-236 package provides a small form factor suitable for surface-mount assembly in space-constrained electronic designs.

Replacement Considerations

The 2N7002E-T1-GE3 is an alternative ordering option within the same series, offering identical electrical performance but explicitly certified as both lead-free and halogen-free.