2N7002KW-AU_R1_000A1

$0.19

Description：SOT-323, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ed4ab10fdb26 Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：SOT-323, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：24 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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2N7002KW-AU_R1_000A1

Overview

The 2N7002KW-AU is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-323 package. It features advanced trench process technology and high-density cell design for ultra-low on-resistance. The device is ESD protected with 2KV HBM capability and qualified to AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60V, continuous drain current of 250mA, and maximum on-resistance of 3Ω at VGS=10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
ESD Protected 2KV HBM

Applications

Battery Operated Systems
Solid-State Relays Drivers
Relay Drivers
Display Drivers
Memory Circuits

Procurement Notes

Verify the specific ordering suffix R1_000A1 against official Panjit documentation to confirm reel packaging quantities and marking codes. Ensure compliance with RoHS 2.0 directives and IEC 61249 green molding compound standards during procurement. Confirm AEC-Q101 qualification status if automotive application requirements are mandatory for the project.

Selection Notes

Select this component for low-voltage switching applications requiring compact SOT-323 footprint. Consider the 250mA continuous current limit and 350mW power dissipation rating for thermal management. Evaluate the 3Ω on-resistance at 10V gate drive against system efficiency requirements. Verify compatibility with battery-operated constraints due to low leakage characteristics.

Part Context

This part belongs to the 2N7002 series of N-Channel Enhancement Mode MOSFETs produced by Panjit. While sharing similar electrical profiles with other variants like the 2N7002K, the KW designation specifically indicates the SOT-323 surface-mount package configuration. The series utilizes advanced trench technology to achieve low on-resistance suitable for portable electronics.

Replacement Considerations

Consult official Panjit substitution guides for verified equivalents. Cross-reference pinout and thermal resistance specifications when considering alternative manufacturers' SOT-323 N-Channel MOSFETs.