2N7002LT1H

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:039d02f2e2f9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002LT1H

Overview

The onsemi 2N7002LT1H is an N-channel small signal MOSFET housed in a SOT-23 (TO-236) surface-mount package. It features a drain-source voltage rating of 60 Vdc and a continuous drain current of 115 mA at 25°C case temperature. The device provides a maximum static drain-source on-state resistance of 7.5 Ohms at VGS = 10 V and ID = 500 mA. It operates within a junction and storage temperature range of -55°C to +150°C.

Feature Summary

Automotive-grade qualification with AEC-Q101 standards and PPAP capability for unique site and control change requirements.
Lead-free, halogen-free, and brominated flame retardant-free construction compliant with RoHS directives.

Applications

Low-voltage load switching applications
Power management circuits
Signal level shifting

Procurement Notes

Verify the specific ordering suffix 'H' against official documentation to confirm tape and reel specifications, as standard variants may utilize different packaging quantities or orientations. Ensure compatibility with automated pick-and-place equipment by referencing the manufacturer's Tape and Reel Packaging Specifications brochure for accurate dimensional data.

Selection Notes

Select this component for designs requiring a compact N-channel enhancement mode MOSFET with robust automotive reliability standards. The low gate threshold voltage facilitates efficient drive from logic-level microcontrollers. Evaluate thermal dissipation constraints carefully, as the small SOT-23 package limits total power handling capabilities compared to larger footprints.

Part Context

This part belongs to the 2N7002L family of small signal MOSFETs manufactured by onsemi. It shares core electrical characteristics with other members like the 2N7002LT1G but is distinguished by its specific packaging configuration indicated by the suffix. The series is designed for general-purpose switching tasks where space efficiency and high reliability are prioritized.

Replacement Considerations

Direct substitutes include the 2V7002LT1G and 2N7002LT1G. Verify pinout compatibility and ensure that alternative packages meet the same thermal and voltage ratings required by the circuit design.