2N7002MTF

$0.21

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c327b37b80e6 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002MTF

Overview

The onsemi 2N7002MTF is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a SOT-23 surface mount package with Drain, Gate, and Source pin configurations. The device provides a Drain-Source Voltage (VDSS) of 60 V and continuous Drain Current (ID) of 115 mA at 25°C. Maximum Power Dissipation (PD) is 200 mW. Static Drain-Source On-Resistance (RDS(ON)) is 7.5 Ω at VGS = 10 V and ID = 500 mA. Operating and Storage Temperature Range is -55 to 150 °C.

Feature Summary

High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability

Applications

Small servo motor control
Power MOSFET gate drivers
Low voltage switching applications

Procurement Notes

Verify the specific suffix 'MTF' against official manufacturer documentation to confirm exact packaging or tape-and-reel specifications. Ensure the component matches the standard 2N7002 electrical parameters defined in the datasheet. Confirm sourcing from authorized distributors to guarantee authenticity and traceability.

Selection Notes

Select this component for low voltage, low current applications requiring fast switching performance. Consider the 60V breakdown voltage and 115mA continuous current limits during circuit design. Evaluate thermal resistance characteristics for heat dissipation requirements in the intended operating environment.

Part Context

The 2N7002 series represents a family of N-channel enhancement mode field effect transistors produced using proprietary DMOS technology. These devices are designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance suitable for various general-purpose switching tasks.