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Product Detailed Parameters
- Description：MOSFET N-CH 60V 170MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.233 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Diodes Incorporated 2N7002Q-7-F is an N-channel enhancement mode field effect transistor (MOSFET) designed for high-efficiency power-management applications. It features a maximum drain-source voltage of 60V and a continuous drain current ranging from 105mA to 210mA depending on ambient temperature. The device offers low on-state resistance, with typical values of 3.2Ω at VGS=10V and 5.0Ω at VGS=5V. Packaged in a compact SOT-23 surface-mount format, it supports fast switching speeds and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance optimized for high-efficiency power management
- Fast switching speed with low input capacitance
- Automotive-compliant qualification under AEC-Q standards
- Totally lead-free and fully RoHS compliant
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific automotive-grade variant by confirming the 'Q' suffix in the part number against official Diodes Incorporated documentation. Ensure that the required operating conditions align with the specified thermal characteristics and package limitations. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability alongside standard MOSFET performance metrics. Consider the low gate threshold voltage for compatibility with logic-level drivers. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the intended application environment.
Part Context
This component belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is widely utilized in small-signal switching applications due to its compact SOT-23 packaging and efficient electrical characteristics. The Q-variant specifically denotes automotive-grade qualification, distinguishing it from standard commercial versions.
Replacement Considerations
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.
