ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The 2N7002TA is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes a SOT-23 surface-mount package and operates with a drain-source voltage of 60V. The device supports a continuous drain current of up to 210mA at +25°C. Static drain-source on-resistance is specified as 5Ω maximum at VGS = 10V and 7.5Ω maximum at VGS = 5V. Total power dissipation reaches 540mW under standard PCB mounting conditions.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed capabilities
- Low gate threshold voltage operation
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific suffix 'TA' against official manufacturer documentation, as it may indicate a specialized packaging or regional variant not explicitly detailed in the standard datasheet ordering information. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement decisions.
Selection Notes
Select this component when a small surface-mount N-channel MOSFET is required for low-power switching applications. Ensure the design accommodates the 60V drain-source voltage limit and the thermal constraints associated with the SOT-23 package. Verify that the gate drive voltage aligns with the specified on-resistance thresholds for optimal performance.
Part Context
This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. The family is designed to minimize on-state resistance while maintaining superior switching performance. Other variants in the series include different packaging options and automotive-qualified versions, such as the 2N7002Q, which share similar electrical characteristics but differ in reliability standards.
Replacement Considerations
The 2N7002DWQ-7-F is a dual-channel alternative within the same product family. Verify pinout compatibility and ensure the replacement meets the required single-channel functionality if applicable.
