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The Diodes Incorporated 2N7002V-7 is a dual N-channel enhancement mode field effect transistor housed in an SOT-563 surface mount package. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 280mA. The device exhibits a static drain-source on-resistance ranging from 7.5Ω to 13.5Ω depending on the gate drive conditions. Designed for high reliability, it meets AEC-Q101 standards and operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required terminal plating specifications, as lead-free and non-lead-free variants exist within this product family. Ensure compliance with RoHS directives if lead-free construction is mandated for the assembly process.
Select this component when space-constrained designs require dual N-channel switching capabilities. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the AEC-Q101 qualification status if the deployment environment demands automotive-grade reliability standards.
This component belongs to the 2N7002 series of N-channel enhancement mode FETs manufactured by Diodes Incorporated. It serves as a specialized dual-channel variant designed to replace discrete single-transistor implementations in dense circuit layouts. The SOT-563 packaging allows for significant board space reduction compared to traditional multi-component arrangements.
The datasheet explicitly states that this part is not recommended for new designs and recommends using the 2N7002VC or VAC series instead. These successor parts offer updated specifications while maintaining functional compatibility within the same package footprint.