2N7002V-7

2N7002V-7

$0.34
  • Description:MOSFET 2N-CH 60V 0.28A SOT563
  • Series:-

SKU:b74d12224d3f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.28A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:280mA
  • Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:150mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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2N7002V-7

Overview

The Diodes Incorporated 2N7002V-7 is a dual N-channel enhancement mode field effect transistor housed in an SOT-563 surface mount package. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 280mA. The device exhibits a static drain-source on-resistance ranging from 7.5Ω to 13.5Ω depending on the gate drive conditions. Designed for high reliability, it meets AEC-Q101 standards and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual N-channel MOSFET configuration providing two independent switching channels in a single ultra-small surface mount package.
  • Low on-resistance and low gate threshold voltage optimized for efficient power handling and logic-level driving.
  • Fast switching speed combined with low input/output leakage currents suitable for high-frequency signal processing.
  • Qualified to AEC-Q101 automotive standards ensuring high reliability under demanding environmental conditions.

Applications

  • Motor controllers requiring compact dual-switching solutions
  • Power management circuits utilizing low-voltage logic interfaces
  • Signal processing applications needing fast switching and low capacitance

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required terminal plating specifications, as lead-free and non-lead-free variants exist within this product family. Ensure compliance with RoHS directives if lead-free construction is mandated for the assembly process.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the AEC-Q101 qualification status if the deployment environment demands automotive-grade reliability standards.

Part Context

This component belongs to the 2N7002 series of N-channel enhancement mode FETs manufactured by Diodes Incorporated. It serves as a specialized dual-channel variant designed to replace discrete single-transistor implementations in dense circuit layouts. The SOT-563 packaging allows for significant board space reduction compared to traditional multi-component arrangements.

Replacement Considerations

The datasheet explicitly states that this part is not recommended for new designs and recommends using the 2N7002VC or VAC series instead. These successor parts offer updated specifications while maintaining functional compatibility within the same package footprint.

2N7002V-72N7002V-7
$0.34
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