2N7002V

$0.57

Description：MOSFET 2N-CH 60V 0.28A SOT563F
Series：-

SKU:01f508b4581e Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.28A SOT563F
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：280mA
Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：250mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563F
Grade：-
Qualification：-

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2N7002V

Overview

The onsemi 2N7002V is an N-channel enhancement mode MOSFET designed for surface-mount applications. It utilizes DMOS technology to achieve low on-resistance and fast switching capabilities within a compact SOT-323 (SC-70) package. The device supports a drain-source voltage of 60 V and a continuous drain current of 115 mA at 25°C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical threshold voltage of 2.1 V, and a maximum power dissipation of 200 mW. These specifications make it suitable for battery protection and load switch circuits.

Feature Summary

High-density cell design for minimized on-resistance
Robust and reliable switching performance
Voltage-controlled small signal operation

Applications

Battery protection circuits
Load switches
Power management systems

Procurement Notes

Verify the specific suffix 'V' against official datasheets to confirm package type and thermal characteristics. Ensure compatibility with existing PCB footprints, particularly for SC-70/SOT-323 variants. Cross-reference manufacturer documentation for lead-free status and RoHS compliance before finalizing procurement orders.

Selection Notes

Select this component for low-voltage, low-current switching tasks requiring high reliability. Evaluate thermal constraints carefully due to the small surface-mount package and limited power dissipation rating. Confirm that the required gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal efficiency.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by onsemi. It shares core functional characteristics with other variants in the family but may differ in packaging or specific electrical tolerances. The standard 2N7002 designation typically refers to the SOT-23 version, while suffixes indicate specific package or tape-and-reel configurations.