2N7002VA-7-F

Overview

The Diodes Incorporated 2N7002VA-7-F is a dual N-channel enhancement mode field effect transistor housed in an SOT-563 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 280mA. The device exhibits a static drain-source on-resistance ranging from 7.5Ω to 13.5Ω, with a gate threshold voltage between 1.0V and 2.5V. Total power dissipation is rated at 150mW, and the operating temperature range spans from -55°C to +150°C.

Feature Summary

• Dual N-channel MOSFET configuration
• Low on-resistance and low gate threshold voltage
• Fast switching speed with low input/output leakage
• Ultra-small surface mount package

Applications

• Load switching
• Power management circuits
• Motor controllers

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status as standard versions are lead-free, while suffix variants may differ. Ensure storage conditions align with J-STD-020D moisture sensitivity level 1 requirements prior to assembly.

Selection Notes

Select this component for applications requiring compact dual N-channel switching solutions. Verify thermal constraints against the 150mW dissipation limit and ensure PCB layout accommodates the SOT-563 footprint. Consider the 60V breakdown rating for appropriate circuit protection margins.

Part Context

This part belongs to the 2N7002 family of dual N-channel enhancement mode FETs. It shares functional similarities with single-channel variants but integrates two transistors within a single ultra-small SOT-563 case. The VA suffix specifically denotes the marking code variant within the SOT-563 packaging line.

Replacement Considerations

Diodes Incorporated recommends using the 2N7002VC or 2N7002VAC parts instead of this model for new designs.