2N7002VA-7

$0.16

Description：MOSFET 2N-CH 60V 0.28A SOT-563
Series：*

SKU:f9f4b413fb5a Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.28A SOT-563
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2N7002VA-7

Overview

The Diodes Incorporated 2N7002VA-7 is a dual N-channel enhancement mode field effect transistor housed in an SOT-563 surface mount package. It features a maximum drain-source voltage of 60V and a continuous drain current of 280mA per channel. The device exhibits a static drain-source on-resistance ranging from 7.5Ω to 13.5Ω depending on the gate drive conditions. Total power dissipation is rated at 150mW, with a thermal resistance junction-to-ambient of 833°C/W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Dual N-channel MOSFET configuration
Low on-resistance and low gate threshold voltage
Fast switching speed with low input/output leakage
Ultra-small surface mount package

Applications

High reliability applications requiring AEC-Q101 qualification
Logic level switching circuits
Load switch applications

Procurement Notes

Verify that the specific part number matches the required dual-channel variant, as single-channel equivalents exist within the same family. Confirm compliance requirements regarding lead-free status, noting that suffixes such as '-L' indicate non-compliant terminal plating. Ensure the design accommodates the 'Not Recommended for New Design' status by evaluating the recommended replacement parts listed in official documentation.

Selection Notes

Select this component when a compact dual N-channel solution is necessary for space-constrained designs. The SOT-563 package provides two independent channels in a minimal footprint. Consider the total power dissipation limit of 150mW and the high thermal resistance when designing heat management strategies. Verify that the 60V breakdown voltage meets the circuit's maximum operating requirements.

Part Context

This component belongs to the 2N7002V/VA series of dual N-channel enhancement mode FETs manufactured by Diodes Incorporated. It shares core electrical characteristics with other members of the family but differs in packaging and pinout configuration due to the SOT-563 case style. The series is designed for general-purpose switching applications requiring small form factors.