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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA TO92-3
- Series：-
- Mfr：Microchip Technology
- Package：Bag
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
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Overview
The Microchip Technology 2N7008-G is an N-Channel Enhancement-Mode Vertical DMOS FET housed in a 3-lead TO-92 package. It features a Drain-to-Source Breakdown Voltage (BVDSS) of 60 V and a maximum Gate-to-Source Voltage of ±30 V. The device supports an On-State Drain Current (ID(ON)) of 500 mA at VGS = 10V, with a Static Drain-to-Source On-State Resistance (RDS(ON)) of 7.5 Ω at VGS = 5V/10V and ID = 50 mA/500 mA. The Gate Threshold Voltage (VGS(th)) ranges from 1 V to 2.5 V. Thermal characteristics include a junction temperature range of -55°C to +150°C and a thermal resistance (θJA) of 132 °C/W.
Feature Summary
- Free from secondary breakdown due to vertical DMOS structure
- Low power drive requirement with high input impedance
- Integral source-drain diode for switching applications
- Excellent thermal stability and ease of paralleling
Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix 'G' indicates lead-free/RoHS-compliant packaging as defined in the product identification system. Confirm the media type corresponds to the required bag quantity for the TO-92 package. Ensure the component matches the DS20005800A datasheet revision for accurate electrical parameters. Cross-reference pinout assignments for Source, Gate, and Drain to prevent installation errors.
Selection Notes
Select this component for low-threshold switching applications requiring high input impedance and fast switching speeds. The vertical DMOS structure provides bipolar-like power handling capabilities. Consider the 7.5 Ω RDS(ON) and 500 mA current rating for appropriate load matching. Verify that the 60 V breakdown voltage meets circuit requirements.
Part Context
This part belongs to Microchip's family of N-Channel Enhancement-Mode Vertical DMOS FETs. It utilizes a silicon-gate manufacturing process designed for low threshold voltage and high breakdown voltage. The device is characterized by low input capacitance and positive temperature coefficients inherent to MOS structures.
Replacement Considerations
Consult official substitution lists or equivalent parameter tables for verified replacements. Generic cross-references are not confirmed substitutes without explicit manufacturer validation.
