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Product Detailed Parameters
- Description：TRANS SJT 650V 16A TO276
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：600 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：32 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：2500pF @ 100V
- Resistance - RDS(On)：60 mOhms
- Power - Max：330 W
- Operating Temperature：-55°C ~ 210°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-276AA
- Supplier Device Package：SMD-0.5
- Grade：-
- Qualification：-
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Overview
The 2N7640-GA is a Silicon Carbide Junction Transistor (SJT) manufactured by GeneSiC Semiconductor. It features an N-channel configuration with a maximum drain-source voltage of 650V and a continuous drain current of 16A. The device operates at a maximum junction temperature of 225°C, with a peak rating of 250°C. Key electrical parameters include a maximum on-resistance of 60 mOhms and a power dissipation capacity of 330W under case conditions. Input capacitance is specified at 1534pF at 35V. The component utilizes a TO-276AA surface mount package.
Feature Summary
- Utilizes silicon carbide technology for high-temperature operation up to 225°C
- Features gate oxide-free design for enhanced reliability
- Provides temperature-independent switching performance
Applications
- High-power industrial applications
- Automotive electronics systems
- Power conversion circuits
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as availability may vary across distributors. Confirm that the received part matches the GeneSiC Semiconductor designation. Check for any obsolescence status updates from the original manufacturer before finalizing procurement plans. Ensure proper handling procedures are followed due to the semiconductor nature of the device.
Selection Notes
Select this component for designs requiring robust high-temperature performance exceeding standard silicon limits. The SJT architecture offers distinct advantages in specific high-voltage scenarios compared to traditional MOSFETs. Evaluate thermal management requirements carefully given the 330W dissipation rating. Consider the TO-276AA package constraints for PCB layout and mounting solutions.
Part Context
This component belongs to the GeneSiC Semiconductor portfolio of wide-bandgap devices. It represents a specialized solution for extreme environment applications where conventional silicon devices fail. The product line focuses on durability and efficiency in power electronics. Understanding its position within the broader SiC market helps in assessing long-term support and integration potential.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative suppliers. Consult official manufacturer channels for current lifecycle status and recommended replacements.
