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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ TO-72
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60kHz
- Gain：-
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：-
- Qualification：-
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Overview
The 2N918 PBFREE is a single NPN VHF oscillator bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-72 metal can package for through-hole mounting. The device supports a maximum collector current of 50 mA and a collector-emitter breakdown voltage of 15 V. Key electrical characteristics include a collector-base voltage of 30 V, an emitter-base voltage of 3 V, and a power dissipation rating of 200 mW. The component features a transition frequency (fT) of 600 MHz and a minimum DC current gain (hFE) of 20. It operates within a temperature range of -65°C to +200°C.
Feature Summary
- Designed specifically for VHF oscillator applications
- Capable of operation at elevated temperatures up to 200°C
- Utilizes a hermetically sealed TO-72 metal can package
Applications
- VHF oscillator circuits
- High-frequency amplification stages
- Military or aerospace electronic systems requiring high thermal stability
Procurement Notes
Verify the specific plating configuration required for the order. Central Semiconductor offers both lead-free (PBFREE) and tin/lead variants. When ordering tin/lead plated devices, explicitly add the suffix TIN/LEAD to the part number. A Central sales representative must confirm the availability of the requested plating type before finalizing procurement.
Selection Notes
Select this component when a ruggedized NPN transistor with high-temperature tolerance is required. The TO-72 package provides superior thermal performance compared to plastic packages. Ensure the circuit design accounts for the 200 mW power dissipation limit and verify that the 600 MHz transition frequency meets the specific VHF application requirements.
Part Context
This part belongs to the discrete semiconductor product category, specifically within the Bipolar Junction Transistors (BJT) subcategory. It is classified as a single NPN transistor intended for through-hole installation. The manufacturer lists it under VHF Oscillator transistors, distinguishing it from general-purpose switching or audio frequency transistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official datasheets for pin-compatible alternatives or perform full electrical parameter matching if considering cross-brand replacements.
