2PB709AS,115

Single Bipolar Transistors Overview

The 2PB709AS,115 is a PNP general-purpose transistor manufactured by Nexperia (formerly NXP Standard Products). It is housed in an SC-59 (SOT-346) plastic surface-mount package. The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 45 V. Key electrical characteristics include a DC current gain (hFE) ranging from 290 to 460 at -2 mA and -10 V, a transition frequency of 80 MHz, and a collector-emitter saturation voltage of 500 mV at -100 mA. Total power dissipation is rated at 250 mW.

Single Bipolar Transistors Feature Summary

• PNP bipolar junction transistor designed for low-voltage and low-current applications
• High DC current gain suitable for amplification tasks
• Surface-mount construction in a compact three-lead plastic package

Single Bipolar Transistors Applications

• General purpose switching circuits
• Signal amplification stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully, as the former NXP Standard Product business was rebranded as Nexperia. Ensure the ordering suffix matches the required gain bin (AS corresponds to the 290-460 hFE range). Confirm RoHS compliance status through official Nexperia channels before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high gain is required in a small footprint. Compare against the NPN complement 2PB601A if complementary pairs are needed. Verify that the operating ambient temperature remains within the specified limits to ensure reliable performance in the target design.

Single Bipolar Transistors Part Context

This part belongs to the family of general-purpose discrete semiconductors originally developed by Philips Semiconductors and later NXP. These components are widely used in consumer electronics and industrial control systems where standard switching and amplification functions are required without specialized high-power or high-frequency capabilities.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in SOT-346 packages with similar voltage and current ratings. Check datasheets for matching hFE bins and thermal resistance values to ensure functional equivalence in existing designs.