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2PD601ART-QR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 50V 0.1A TO-236AB. Review the specifications below when checking this part for your BOM.
The Nexperia 2PD601ART-QR is an NPN general-purpose transistor housed in a small SOT23 (TO-236AB) surface-mounted device plastic package. It features a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The device offers a DC current gain ranging from 210 to 340 at specific test conditions, with a transition frequency of 100 MHz. Qualified according to AEC-Q101, it supports automotive applications with a junction temperature rating up to 150 °C and total power dissipation of 250 mW.
Verify the complete part number including the suffix against official Nexperia documentation to ensure correct packaging and marking codes. Confirm that the AEC-Q101 qualification status aligns with specific automotive reliability requirements before finalizing procurement decisions.
Select this component for designs requiring a compact NPN transistor with automotive-grade reliability. Ensure the operating conditions remain within the specified 50 V collector-emitter voltage and 100 mA collector current limits. Consider the SOT23 package dimensions for space-constrained PCB layouts.
This component belongs to the 2PD601A series of NPN general-purpose transistors manufactured by Nexperia. It serves as a complement to PNP devices like the 2PB709ART. The product line is designed for versatile use in consumer and automotive electronics where small form factors and reliable performance are essential.
Direct substitutes include other AEC-Q101 qualified NPN transistors in SOT23 packages with matching 50 V and 100 mA ratings. Verify pinout compatibility and thermal characteristics when replacing.
The marking code is C3, followed by a placeholder for the manufacturing site code.
It has a transition frequency of 100 MHz, making it suitable for general-purpose switching and amplification but not necessarily for very high-frequency RF applications.
The maximum junction temperature is 150 °C.
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