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2SA1015 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists EVVO. Its product description is TRANS PNP ECB -150MA -50V SOT2. Review the specifications below when checking this part for your BOM.
The EVVO 2SA1015 is a PNP epitaxial planar silicon transistor housed in an SOT-23 surface-mount package. It features a collector-emitter breakdown voltage of -50V and a maximum continuous collector current of -150mA. The device offers a DC current gain (hFE) ranging from 130 to 400, with a transition frequency of 80MHz at specified test conditions. Maximum power dissipation is rated at 200mW, and the junction temperature range spans from -55°C to 150°C.
Verify the specific hFE classification suffix (e.g., A, B, L, H) required for your design, as gain ranges vary by type. Confirm the SOT-23 pinout configuration matches your PCB footprint before finalizing procurement. Ensure thermal management supports the 200mW power dissipation limit under operating conditions.
Select this component when a small-form-factor PNP transistor with moderate voltage ratings and low noise characteristics is needed. The wide hFE range allows flexibility in biasing designs. Consider the 80MHz transition frequency for high-speed switching or RF amplification tasks within the specified current limits.
This part belongs to the EVVO 2SA1015 series, which includes variants distinguished by gain classifications such as 2SA1015-A, 2SA1015-B, 2SA1015-L, and 2SA1015-H. All variants share the same electrical ratings and physical SOT-23 package but differ in their minimum and maximum DC current gain specifications.
Public confirmed substitute part numbers are not available in the provided documentation.
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