2SA1020-O(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SA1020-O(TE6,F,M) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device supports a collector power dissipation of 900 mW at 25°C ambient temperature, with a junction temperature rating up to 150 °C. Electrical characteristics include a DC current gain (hFE) range of 70 to 140 for the 'O' classification, a transition frequency of 100 MHz, and a typical storage time of 1.0 μs. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of -0.5 V maximum at -1 A collector current
• High-speed switching capability with a typical storage time of 1.0 μs
• Complementary pairing available with the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as markings indicate potential variations between standard and RoHS-compliant versions. Confirm the specific hFE binning ('O' class: 70-140) required for the application design. Ensure absolute maximum ratings are not exceeded during operation to maintain reliability standards defined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A with moderate voltage ratings of 50 V. The TO-92MOD package suits through-hole mounting constraints. Verify thermal derating requirements for ambient temperatures exceeding 25°C to ensure the 900 mW power dissipation limit is respected. Consider the complementary 2SC2655 if push-pull configurations are necessary.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA1020 series of general-purpose PNP transistors. It is designed for use in consumer electronics, office equipment, and industrial control systems where reliable switching and amplification are required. The device is distinct from higher-power variants like the 2SA1358 and complements the 2SC2655 NPN counterpart.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is the designated complementary NPN transistor for matched pairs. Cross-manufacturer equivalents may exist but require verification of pinout compatibility, hFE ranges, and saturation voltages against the original specifications.

Single Bipolar Transistors FAQ

What is the hFE classification range for the 'O' suffix?

The 'O' classification indicates a DC current gain (hFE) range of 70 to 140 when measured at VCE = -2 V and IC = -0.5 A.

Is this component suitable for aerospace or medical applications?

No. Toshiba explicitly restricts this product from unintended uses such as aerospace, medical equipment, nuclear facilities, and transportation safety devices due to reliability requirements.

What is the maximum base current allowed?

The absolute maximum rating for base current (IB) is -0.2 A.