2SA1020-Y(T6TR,A,F

Description：TRANS PNP 50V 2A TO-92MOD
Series：-

SKU:d38d2ad6562c Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1020-Y(T6TR,A,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020-Y(T6TR,A,F

Description：TRANS PNP 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1020-Y(T6TR,A,F

2SA1020-Y(T6TR,A,F

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y(T6TR,A,F) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V. The device offers a high collector power dissipation of 900 mW and a transition frequency of 100 MHz. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240 at specific test conditions, with a maximum collector saturation voltage of -0.5 V at 1 A. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Low collector saturation voltage for efficient switching performance
High-speed switching capability with typical storage time of 1.0 μs
High collector power dissipation rating suitable for amplifier applications

Single Bipolar Transistors Applications

Power amplifier circuits
General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the RoHS compatibility status by contacting the manufacturer or authorized distributor, as environmental compliance depends on specific production batches. Confirm that the ordering suffix matches the required packaging format and electrical binning specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with a 2 A continuous current capacity and 50 V breakdown voltage. Ensure the application operates within the 900 mW power dissipation limit and consider thermal derating for ambient temperatures exceeding 25°C. Verify hFE bin requirements against circuit gain needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1020 series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It is designed as a complementary device to the NPN 2SC2655 transistor. The series utilizes a PCT process to achieve high current handling and fast switching speeds within a standard through-hole plastic encapsulated package.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN counterpart. Direct replacement requires verifying pinout compatibility and ensuring the substitute meets the 2 A current and 50 V voltage ratings.