2SA10960Q

Single Bipolar Transistors Overview

The Panasonic 2SA1096Q is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification. It operates with a collector-emitter voltage of -50 V and a continuous collector current of -2 A. The device delivers up to 1.2 W of power dissipation at 25°C ambient temperature. It features a transition frequency of 150 MHz and a forward current transfer ratio ranging from 80 to 160 in the Q rank. Packaged in a TO-126B-A1 format, it serves as a complementary pair to the 2SC2497 series.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency power amplification applications
• TO-126B package allows direct heat sink installation without insulation plates
• Engineered as a complementary pair to the 2SC2497 and 2SC2497A NPN transistors

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• General electronic equipment such as office and communications devices
• Measuring instruments and household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (Q or R) against the required hFE gain range before procurement. Confirm the component lifecycle status on the official Panasonic semiconductor website, as this product may be subject to maintenance or discontinuation schedules. Ensure the latest Product Standards are requested during the final design stage to verify specifications have not changed.

Single Bipolar Transistors Selection Notes

Select the 2SA1096Q when paired with 2SC2497 series transistors to achieve an output of 5 W. Choose the Q rank if the application requires a forward current transfer ratio between 80 and 160. Consider the TO-126B package for simplified thermal management that eliminates the need for separate insulating materials during heat sink mounting.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1096 family of silicon PNP epitaxial planar transistors manufactured by Panasonic Electronic Components. It is part of a complementary set intended for general-purpose power amplification tasks. The device utilizes a standard TO-126B-A1 package configuration common in through-hole mounting scenarios for medium-power discrete semiconductors.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None available.